| No. |
Part Name |
Description |
Manufacturer |
| 12781 |
1N6383 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 12782 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12783 |
1N6383 |
Diode TVS Single Bi-Dir 10V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12784 |
1N6384 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 12785 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12786 |
1N6384 |
Diode TVS Single Bi-Dir 12V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12787 |
1N6385 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 12788 |
1N6385 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12789 |
1N6385 |
Diode TVS Single Bi-Dir 15V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12790 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12791 |
1N6386 |
Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12792 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12793 |
1N6387 |
Diode TVS Single Bi-Dir 22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12794 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12795 |
1N6388 |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12796 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12797 |
1N6389 |
Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12798 |
1N6391 |
Diode Schottky 45V 25A 2-Pin DO-4 |
New Jersey Semiconductor |
| 12799 |
1N6392 |
Diode Schottky 45V 60A 2-Pin DO-5 |
New Jersey Semiconductor |
| 12800 |
1N63A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 12801 |
1N63A |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
| 12802 |
1N64 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 12803 |
1N643 |
Silicon Planar Diode |
ITT Semiconductors |
| 12804 |
1N643A |
Silicon Planar Diode |
ITT Semiconductors |
| 12805 |
1N645 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 12806 |
1N645 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 12807 |
1N645 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 12808 |
1N645A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 12809 |
1N646 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 12810 |
1N646 |
Diode 300V 0.4A 2-Pin DO-35 |
New Jersey Semiconductor |
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