| No. |
Part Name |
Description |
Manufacturer |
| 12781 |
JAN2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 12782 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12783 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12784 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12785 |
JAN2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 12786 |
JDP2S01AFS |
DIODE Silicon Epitaxial PIN Type UHF~VHF Band RF Switch Applications |
TOSHIBA |
| 12787 |
JDP2S01E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12788 |
JDP2S01S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12789 |
JDP2S01T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12790 |
JDP2S01U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12791 |
JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12792 |
JDP2S02S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12793 |
JDP2S02T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12794 |
JDP2S04E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12795 |
JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 12796 |
JDS2S03S |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 12797 |
JDV2S07FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 12798 |
JDV2S09FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 12799 |
JDV2S10FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 12800 |
JDV2S36E |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 12801 |
JDV2S41FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 12802 |
JDV3C11 |
Diode Silicon Epitaxial Planar Type Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 12803 |
K-Series |
Application Information - Direct Access Arrangement (DAA), Design and Layout Considerations |
Silicon Systems |
| 12804 |
K142 |
Very High-Speed Switching Applications |
SANYO |
| 12805 |
K2011 |
IF filter for intercarrier application (IF= 38.0 MHz. standard B/G-CCIR, D/K-OIRT) |
etc |
| 12806 |
K246 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 12807 |
K246 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 12808 |
K246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 12809 |
K2717 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
TOSHIBA |
| 12810 |
K2955M |
IF Filter for Intercarrier Applications |
EPCOS |
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