| No. |
Part Name |
Description |
Manufacturer |
| 12841 |
M485L1624FT0-CA2 |
DDR SDRAM SODIMM |
Samsung Electronic |
| 12842 |
M485L1624FT0-CB0 |
DDR SDRAM SODIMM |
Samsung Electronic |
| 12843 |
M485L1624FT0-CB3 |
DDR SDRAM SODIMM |
Samsung Electronic |
| 12844 |
M485L1624FU0-CA2 |
DDR SDRAM SODIMM |
Samsung Electronic |
| 12845 |
M485L1624FU0-CB0 |
DDR SDRAM SODIMM |
Samsung Electronic |
| 12846 |
M485L1624FU0-CB3 |
DDR SDRAM SODIMM |
Samsung Electronic |
| 12847 |
M66220FP |
ASSP>Special Memories>Dual Port RAMs (Mail Box) |
Renesas |
| 12848 |
M66220SP |
ASSP>Special Memories>Dual Port RAMs (Mail Box) |
Renesas |
| 12849 |
M66222FP |
ASSP>Special Memories>Dual Port RAMs (Mail Box) |
Renesas |
| 12850 |
M66222SP |
ASSP>Special Memories>Dual Port RAMs (Mail Box) |
Renesas |
| 12851 |
M66223FP |
ASSP>Special Memories>Dual Port RAMs (Mail Box) |
Renesas |
| 12852 |
MAAMSS0006 |
50-450 MHz, high dynamic range GaAs HBT amplifier |
MA-Com |
| 12853 |
MAAMSS0006 |
High Dynamic Range GaAs HBT Amplifier, 50 - 450 MHz |
Tyco Electronics |
| 12854 |
MAAMSS0007 |
800-2500 MHz, High dynamic range GaAs amplifier |
MA-Com |
| 12855 |
MAAMSS0007 |
High Dynamic Range GaAs Amplifier, 800 - 2500 MHz |
Tyco Electronics |
| 12856 |
MAAMSS0007-TB |
High Dynamic Range GaAs Amplifier, 800 - 2500 MHz |
Tyco Electronics |
| 12857 |
MAAMSS0007TR |
High Dynamic Range GaAs Amplifier, 800 - 2500 MHz |
Tyco Electronics |
| 12858 |
MAAMSS0017 |
Broadband IF Driver Amplifier 50 - 450 MHz |
Tyco Electronics |
| 12859 |
MAAMSS0017TR |
50-450 MHz, broadband IF driver amplifier |
MA-Com |
| 12860 |
MAAMSS0017TR3000 |
50-450 MHz, broadband IF driver amplifier |
MA-Com |
| 12861 |
MAAMSS0017TR3000 |
Broadband IF Driver Amplifier 50 - 450 MHz |
Tyco Electronics |
| 12862 |
MAX-B550 |
THREE-CD CHANGER MINI-COMPACT SYSTEM CD-R/RW PLAYBACK |
Samsung Electronic |
| 12863 |
MAX-B570 |
THREE-CD CHANGER MINI-COMPACT SYSTEM CD-R/RW PLAYBACK |
Samsung Electronic |
| 12864 |
MAX662AMSA/PR |
12V, 30mA Flash Memory Programming Supply |
MAXIM - Dallas Semiconductor |
| 12865 |
MAX662AMSA/PR+ |
12V, 30mA Flash Memory Programming Supply |
MAXIM - Dallas Semiconductor |
| 12866 |
MAX6725KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 12867 |
MAX6726KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 12868 |
MAX6727KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 12869 |
MAX6728KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 12870 |
MAX6729KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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