| No. |
Part Name |
Description |
Manufacturer |
| 12841 |
GT400D/3 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12842 |
GT400D/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12843 |
GT400D/5 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12844 |
GT400D/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12845 |
GT400D/7 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12846 |
GT400D/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12847 |
GT400D/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12848 |
GT400E/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12849 |
GT400E/3 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12850 |
GT400E/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12851 |
GT400E/5 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12852 |
GT400E/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12853 |
GT400E/7 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12854 |
GT400E/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12855 |
GT400E/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12856 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 12857 |
GT40J121 |
IGBT for soft switching applications |
TOSHIBA |
| 12858 |
GT40J321 |
IGBT for soft switching applications |
TOSHIBA |
| 12859 |
GT40J322 |
IGBT for soft switching applications |
TOSHIBA |
| 12860 |
GT40J325 |
IGBT for soft switching applications |
TOSHIBA |
| 12861 |
GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 12862 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 12863 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 12864 |
GT40Q322 |
Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 12865 |
GT40QR21 |
IGBT for soft switching applications |
TOSHIBA |
| 12866 |
GT40RR21 |
IGBT for soft switching applications |
TOSHIBA |
| 12867 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 12868 |
GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications |
TOSHIBA |
| 12869 |
GT40T321 |
IGBT for soft switching applications |
TOSHIBA |
| 12870 |
GT40WR21 |
IGBT for soft switching applications |
TOSHIBA |
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