| No. |
Part Name |
Description |
Manufacturer |
| 12841 |
GS507 |
Germanium switching NPN transistor |
Tesla Elektronicke |
| 12842 |
GSA400AA120 |
High speed, high current switching applications. |
SanRex |
| 12843 |
GSD2004A |
Dual Common-Anode Small-Signal Switching Diode |
Vishay |
| 12844 |
GSD2004A-GS08 |
Dual Common-Anode Small-Signal High-Voltage Switching Diode |
Vishay |
| 12845 |
GSD2004A-GS18 |
Dual Common-Anode Small-Signal High-Voltage Switching Diode |
Vishay |
| 12846 |
GSD2004S |
Dual In-Series Small-Signal Switching Diode |
Vishay |
| 12847 |
GSD2004W |
High-Voltage Small-Signal Switching Diode |
Vishay |
| 12848 |
GSD2004WS |
High-Voltage Small-Signal Switching Diode |
Vishay |
| 12849 |
GT100A/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12850 |
GT100A/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12851 |
GT100A/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12852 |
GT100A/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12853 |
GT100A/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12854 |
GT100B/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12855 |
GT100B/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12856 |
GT100B/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12857 |
GT100B/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12858 |
GT100B/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12859 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 12860 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 12861 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 12862 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 12863 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 12864 |
GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 12865 |
GT10Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 12866 |
GT150A/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12867 |
GT150A/3 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12868 |
GT150A/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12869 |
GT150A/5 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12870 |
GT150A/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| | | |
