| No. |
Part Name |
Description |
Manufacturer |
| 12841 |
SMDJ160 |
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12842 |
SMDJ160 |
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12843 |
SMDJ160A |
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12844 |
SMDJ160A |
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12845 |
SMDJ170 |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12846 |
SMDJ170 |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12847 |
SMDJ170A |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12848 |
SMDJ170A |
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12849 |
SML100B11F |
1000V Vdss N-Channel+Fred FET (field effect transistor) |
SemeLAB |
| 12850 |
SML100B13F |
1000V Vdss N-Channel+Fred FET (field effect transistor) |
SemeLAB |
| 12851 |
SML100J19F |
1000V Vdss N-Channel+Fred FET (field effect transistor) |
SemeLAB |
| 12852 |
SML120B8 |
1200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
| 12853 |
SML20J175F |
200V Vdss N-Channel+Fred FET (field effect transistor) |
SemeLAB |
| 12854 |
SML20L100F |
200V Vdss N-Channel+Fred FET (field effect transistor) |
SemeLAB |
| 12855 |
SML30J130F |
300V Vdss N-Channel+Fred FET (field effect transistor) |
SemeLAB |
| 12856 |
SMLJ100 |
100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12857 |
SMLJ100 |
100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12858 |
SMLJ100A |
100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12859 |
SMLJ100A |
100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12860 |
SMLJ110 |
110.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12861 |
SMLJ110 |
110.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12862 |
SMLJ110A |
110.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12863 |
SMLJ110A |
110.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12864 |
SMLJ120 |
120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12865 |
SMLJ120 |
120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12866 |
SMLJ120A |
120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12867 |
SMLJ120A |
120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12868 |
SMLJ130 |
130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12869 |
SMLJ130 |
130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12870 |
SMLJ130A |
130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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