| No. |
Part Name |
Description |
Manufacturer |
| 12871 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 12872 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 12873 |
BC237A |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12874 |
BC237B |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12875 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 12876 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 12877 |
BC238A |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12878 |
BC238B |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12879 |
BC238C |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12880 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 12881 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 12882 |
BC239B |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12883 |
BC239C |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12884 |
BC2I4 |
COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS |
Micro Electronics |
| 12885 |
BC2I4L |
COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS |
Micro Electronics |
| 12886 |
BC300 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 12887 |
BC300 |
Transistor for high voltage amplifiers |
SGS-ATES |
| 12888 |
BC300 |
Transistor, medium power audio amplifiers |
SGS-ATES |
| 12889 |
BC301 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 12890 |
BC301 |
Transistor, medium power audio amplifiers |
SGS-ATES |
| 12891 |
BC302 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 12892 |
BC302 |
Transistor, medium power audio amplifiers |
SGS-ATES |
| 12893 |
BC303 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 12894 |
BC303 |
Transistor, medium power audio amplifiers |
SGS-ATES |
| 12895 |
BC304 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 12896 |
BC304 |
Transistor, medium power audio amplifiers |
SGS-ATES |
| 12897 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 12898 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 12899 |
BC307A |
PNP silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 12900 |
BC307VI |
PNP silicon transistor, audio amplification and general purpose |
SESCOSEM |
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