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Datasheets for PER

Datasheets found :: 27870
Page: | 426 | 427 | 428 | 429 | 430 | 431 | 432 | 433 | 434 |
No. Part Name Description Manufacturer
12871 MAX6738XKYD3-T Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12872 MAX6738XKZD3-T Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12873 MAX6739XKLD3-T Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12874 MAX6739XKMD3-T Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12875 MAX6739XKRD3-T Vcc1: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12876 MAX6739XKSD3-T Vcc1: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12877 MAX6739XKTD3-T Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12878 MAX6739XKVD3-T Vcc1: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12879 MAX6739XKWD3-T Vcc1: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12880 MAX6739XKYD3-T Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12881 MAX6739XKZD3-T Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12882 MAX6740XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12883 MAX6740XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12884 MAX6740XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12885 MAX6740XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12886 MAX6740XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12887 MAX6740XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12888 MAX6740XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12889 MAX6740XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12890 MAX6740XKSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12891 MAX6740XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12892 MAX6740XKSHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12893 MAX6740XKSVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12894 MAX6740XKSYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12895 MAX6740XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12896 MAX6740XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12897 MAX6740XKTID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12898 MAX6740XKTWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12899 MAX6740XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
12900 MAX6740XKVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 27870
Page: | 426 | 427 | 428 | 429 | 430 | 431 | 432 | 433 | 434 |



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