No. |
Part Name |
Description |
Manufacturer |
12901 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
12902 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
12903 |
1N5157 |
Silicon planar epitaxial varactor diode for use in multipliers C up to X band |
Mullard |
12904 |
1N5162 |
150AMP AVG SILICON RECTIFIER DIODES |
International Rectifier |
12905 |
1N5179 |
AXIAL LEADS DIODES |
New Jersey Semiconductor |
12906 |
1N5181 |
Diode Switching 4KV 0.1A 2-Pin Case S |
New Jersey Semiconductor |
12907 |
1N5182 |
Diode Switching 5KV 0.1A 2-Pin Case S |
New Jersey Semiconductor |
12908 |
1N5183 |
Diode Switching 7.5KV 0.1A 2-Pin Case S |
New Jersey Semiconductor |
12909 |
1N5184 |
Diode Switching 10KV 0.1A 2-Pin Case S |
New Jersey Semiconductor |
12910 |
1N5186 |
100 V, 3 W silicon rectifier diode |
BKC International Electronics |
12911 |
1N5186 |
Diode Switching 2-Pin GPR-4AM |
New Jersey Semiconductor |
12912 |
1N5194 |
70 V, 500 mW silicon diode |
BKC International Electronics |
12913 |
1N5194 |
GENERAL PURPOSE SILICON DIODES |
Compensated Devices Incorporated |
12914 |
1N5194 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
12915 |
1N5194 |
Switching Diode |
ITT Semiconductors |
12916 |
1N5194 |
Diode Switching 70V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
12917 |
1N5194UR |
GENERAL PURPOSE SILICON DIODES |
Compensated Devices Incorporated |
12918 |
1N5195 |
180 V, 500 mW silicon diode |
BKC International Electronics |
12919 |
1N5195 |
GENERAL PURPOSE SILICON DIODES |
Compensated Devices Incorporated |
12920 |
1N5195 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
12921 |
1N5195 |
Switching Diode |
ITT Semiconductors |
12922 |
1N5195 |
Diode Switching 180V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
12923 |
1N5195UR |
GENERAL PURPOSE SILICON DIODES |
Compensated Devices Incorporated |
12924 |
1N5196 |
225 V, 500 mW silicon diode |
BKC International Electronics |
12925 |
1N5196 |
GENERAL PURPOSE SILICON DIODES |
Compensated Devices Incorporated |
12926 |
1N5196 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
12927 |
1N5196 |
Switching Diode |
ITT Semiconductors |
12928 |
1N5196 |
Diode Switching 225V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
12929 |
1N5196UR |
GENERAL PURPOSE SILICON DIODES |
Compensated Devices Incorporated |
12930 |
1N52 |
Gold Bond Germanium Diode |
ITT Semiconductors |
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