No. |
Part Name |
Description |
Manufacturer |
1291 |
STB19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
1292 |
STD18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in DPAK package |
ST Microelectronics |
1293 |
STEVAL-ILL016V2 |
New 15 W offline TRIAC dimmable LED driver based on L6562AD and TSM1052 (USA Market - 115 V) |
ST Microelectronics |
1294 |
STEVAL-ISA153V1 |
12 V, 15 W (20 W peak) isolated flyback converter based on the VIPER38LE |
ST Microelectronics |
1295 |
STF16N50U |
N-channel 500 V, 0.47 Ohm, 15 A UltraFAST MESH(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
1296 |
STF18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
1297 |
STF19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
1298 |
STF20NM65N |
N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in TO-220FP package |
ST Microelectronics |
1299 |
STFI20NM65N |
N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in I2PAKFP package |
ST Microelectronics |
1300 |
STG4158 |
Low voltage 0.6 Ω typ single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
1301 |
STG4158BJR |
Low voltage 0.6 Ω typ single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
1302 |
STG4160 |
Low voltage 0.5 Ohm single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
1303 |
STG4160BJR |
Low voltage 0.5 Ohm single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
1304 |
STG4260 |
Low voltage 0.5 Ω dual SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
1305 |
STG4260BJR |
Low voltage 0.5 Ω dual SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
1306 |
STGB15H60DF |
Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
ST Microelectronics |
1307 |
STGF15H60DF |
Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
ST Microelectronics |
1308 |
STGIPL14K60 |
SLLIMM(TM) small low-loss intelligent molded module IPM, 3-phase inverter - 15 A, 600 V short-circuit rugged IGBT |
ST Microelectronics |
1309 |
STGIPL14K60-S |
SLLIMM(TM) small low-loss intelligent molded module IPM, 3-phase inverter - 15 A, 600 V short-circuit rugged IGBT |
ST Microelectronics |
1310 |
STGIPS15C60 |
SLLIMM(TM) small low-loss intelligent molded module IPM, 3-phase inverter - 15 A, 600 V short-circuit rugged IGBT |
ST Microelectronics |
1311 |
STGIPS15C60-H |
SLLIMM(TM) small low-loss intelligent molded module IPM, 3-phase inverter - 15 A, 600 V short-circuit rugged IGBT |
ST Microelectronics |
1312 |
STGP15H60DF |
Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
ST Microelectronics |
1313 |
STGW15H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed |
ST Microelectronics |
1314 |
STGW15H120F2 |
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed |
ST Microelectronics |
1315 |
STGW15M120DF3 |
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss |
ST Microelectronics |
1316 |
STGWA15M120DF3 |
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss |
ST Microelectronics |
1317 |
STI18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in I2PAK package |
ST Microelectronics |
1318 |
STK400-010 |
2ch AF Power Amplifier (Split Power Supply) 15 W + 15 W, THD = 0.08% |
SANYO |
1319 |
STK400-010 |
2ch AF Power Amplifier (Split Power Supply) 15 W + 15 W, THD = 0.08% |
SANYO |
1320 |
STK400-010 |
AF Power Amplifier (Split Power Supply) (15 W + 15 W min, THD = 0.4%) |
SANYO |
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