DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 4 B

Datasheets found :: 1988
Page: | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 |
No. Part Name Description Manufacturer
1291 KM432S2030CT-G7 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
1292 KM432S2030CT-G8 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
1293 KM44C4104A-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1294 KM44C4104A-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1295 KM44C4104A-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1296 KM44C4104A-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1297 KM44C4104AL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1298 KM44C4104AL-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1299 KM44C4104AL-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1300 KM44C4104AL-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1301 KM44C4104ALL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1302 KM44C4104ALL-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1303 KM44C4104ALL-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1304 KM44C4104ALL-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1305 KM44C4104ASL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1306 KM44C4104ASL-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1307 KM44C4104ASL-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1308 KM44C4104ASL-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
1309 KM44S16030BT-G_F10 100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1310 KM44S16030BT-G_F8 125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1311 KM44S16030BT-G_FH 100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1312 KM44S16030BT-G_FL 100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1313 KM44S16030CT-G_F10 100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1314 KM44S16030CT-G_F7 143MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1315 KM44S16030CT-G_F8 125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1316 KM44S16030CT-G_FH 100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1317 KM44S16030CT-G_FL 100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM Samsung Electronic
1318 KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM Samsung Electronic
1319 KM44S32030B 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
1320 KM44S32030BT-G/F10 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic


Datasheets found :: 1988
Page: | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 |



© 2024 - www Datasheet Catalog com