| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
M41ST85WSH |
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
ST Microelectronics |
| 1292 |
M41ST85YMH |
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
ST Microelectronics |
| 1293 |
M41ST85YMX |
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
ST Microelectronics |
| 1294 |
M41ST85YMX6TR |
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
ST Microelectronics |
| 1295 |
M41ST85YSH |
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
ST Microelectronics |
| 1296 |
M41T56C64 |
512 bit (64 bit x8) Serial Access TIMEKEEPER SRAM + 64 Kbit (8192 bit x8) EEPROM |
ST Microelectronics |
| 1297 |
M41T56C64MY6E |
512 bit (64 bit x8) Serial Access TIMEKEEPER SRAM + 64 Kbit (8192 bit x8) EEPROM |
ST Microelectronics |
| 1298 |
M41T94MH |
512 Bit 64 bit x8 SERIAL RTC SPI SRAM |
ST Microelectronics |
| 1299 |
M41T94MQ |
512 Bit 64 bit x8 SERIAL RTC SPI SRAM |
ST Microelectronics |
| 1300 |
M41T94SH |
512 Bit 64 bit x8 SERIAL RTC SPI SRAM |
ST Microelectronics |
| 1301 |
M41T94SH |
512 Bit 64 bit x8 SERIAL RTC SPI SRAM |
ST Microelectronics |
| 1302 |
M464S0924BT1 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
| 1303 |
M464S0924CT1 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 1304 |
M464S0924CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect |
Samsung Electronic |
| 1305 |
M464S0924CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet |
Samsung Electronic |
| 1306 |
M464S3254AT1 |
32MB x 64 SDRAM SODIMM based on 16MB x 16, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 1307 |
M464S3254AT1 |
32MB x 64 SDRAM SODIMM based on 16MB x 16, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 1308 |
M464S3254AT1 |
32MB x 64 SDRAM SODIMM based on 16MB x 16, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
| 1309 |
M466F0404DT2-L EDO MODE |
4MB x 64 DRAM SODIMM Using 4MB x 16, 4KB Refresh 3.3V, Low power/Self-Refresh Data Sheet |
Samsung Electronic |
| 1310 |
M466F0804DT1-L EDO MODE |
8M x 64 DRAM SODIMM Using 4M x 16, 4K Refresh, 3.3V, Low power/Self-Refresh Data Sheet |
Samsung Electronic |
| 1311 |
M48T58-70MH1 |
5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER SRAM |
ST Microelectronics |
| 1312 |
M48T58-70MH1TR |
5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER SRAM |
ST Microelectronics |
| 1313 |
M48T58-70PC1TR |
5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER SRAM |
ST Microelectronics |
| 1314 |
M48T58Y-70PC1TR |
5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER SRAM |
ST Microelectronics |
| 1315 |
M4LV-128N_64-14JI |
High-performance E2CMOS logic, 3.3V Vcc, 128 macrocells, non-ISP, 64 I/Os, 14ns |
Lattice Semiconductor |
| 1316 |
M4LV-128_64-14VI |
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns |
Lattice Semiconductor |
| 1317 |
M4LV-128_64-14YI |
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns |
Lattice Semiconductor |
| 1318 |
M95640-125 |
Automotive 64 Kbit serial SPI bus EEPROM |
ST Microelectronics |
| 1319 |
M95640-A125 |
Automotive 64 Kbit SPI bus EEPROM with high speed clock |
ST Microelectronics |
| 1320 |
M95640-A145 |
Automotive 64 Kbit SPI bus EEPROM with high speed clock |
ST Microelectronics |
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