| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
2N1707 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 1292 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 1293 |
2N1711 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1294 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1295 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1296 |
2N1711 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1297 |
2N1711A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1298 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1299 |
2N1724 |
NPN Triple Diffused - Military applications |
SESCOSEM |
| 1300 |
2N1724A |
NPN Triple Diffused - Military applications |
SESCOSEM |
| 1301 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1302 |
2N1725 |
NPN Triple Diffused - Military applications |
SESCOSEM |
| 1303 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 1304 |
2N1742 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1305 |
2N1743 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1306 |
2N1744 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1307 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1308 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 1309 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1310 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1311 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1312 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1313 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1314 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1315 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1316 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1317 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1318 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1319 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1320 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
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