DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for METAL

Datasheets found :: 15560
Page: | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 |
No. Part Name Description Manufacturer
1291 CFY25 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
1292 CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
1293 CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
1294 CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
1295 CGY31 GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) Siemens
1296 CGY52 GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) Siemens
1297 CIL351 0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE. Continental Device India Limited
1298 CIL352 0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE. Continental Device India Limited
1299 CK100B 3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 100 - 300 hFE. Complementary CL100B Continental Device India Limited
1300 CK100S 3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 20 hFE. Continental Device India Limited
1301 CL100 0.800W General Purpose NPN Metal Can Transistor. V Vceo, A Ic, 50 - 280 hFE. Continental Device India Limited
1302 CL100A 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 - 120 hFE. Complementary CK100A Continental Device India Limited
1303 CL100B 3.000W General Purpose NPN Metal Can Transistor. V Vceo, A Ic, 100 - 300 hFE. Complementary CL100B Continental Device India Limited
1304 CL100S 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 20 hFE. Continental Device India Limited
1305 CLD141 Silicon Photodiode, TO-46 metal can Clairex Technologies
1306 CLD141R Silicon Photodiode, TO-46 metal can Clairex Technologies
1307 CLD142 Silicon Photodiode, TO-46 metal can Clairex Technologies
1308 CLD142R Silicon Photodiode, TO-46 metal can Clairex Technologies
1309 CLD156 Silicon Photodiode, TO-5 metal can Clairex Technologies
1310 CLD156R Silicon Photodiode, TO-5 metal can Clairex Technologies
1311 CLD160 Silicon Photodiode, TO-5 metal can Clairex Technologies
1312 CLD185 Silicon Photodiode, 3 leaded TO-8 metal can Clairex Technologies
1313 CLD185R Silicon Photodiode, 3 leaded TO-8 metal can Clairex Technologies
1314 CLD340 GaAs Photodidoe, TO-46 metal can Clairex Technologies
1315 CLE130 940nm IRED, TO-46 metal can Clairex Technologies
1316 CLE131 940nm IRED, TO-46 metal can Clairex Technologies
1317 CLE132 940nm IRED, TO-46 metal can Clairex Technologies
1318 CLE133 940nm IRED, TO-46 metal can Clairex Technologies
1319 CLE135 940nm IRED, TO-46 metal can Clairex Technologies
1320 CLE230 880nm IRED, TO-46 metal can Clairex Technologies


Datasheets found :: 15560
Page: | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 |



© 2024 - www Datasheet Catalog com