| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
1SS349 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1292 |
1SS352 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1293 |
1SS353 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
| 1294 |
1SS354 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
| 1295 |
1SS355 |
Diodes > Switching Diodes > Surface mounting type |
ROHM |
| 1296 |
1SS356 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 1297 |
1SS356FH |
Band Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 1298 |
1SS356FHTW11 |
Band Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 1299 |
1SS356TW11 |
Band Switching Diode |
ROHM |
| 1300 |
1SS357 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1301 |
1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1302 |
1SS360F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1303 |
1SS361 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1304 |
1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1305 |
1SS361LP3 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1306 |
1SS361LP3-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1307 |
1SS361LPH4 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1308 |
1SS361LPH4-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1309 |
1SS361LPH4-7B |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1310 |
1SS361UDJ |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1311 |
1SS361UDJ-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1312 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1313 |
1SS367 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 1314 |
1SS368 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
| 1315 |
1SS369 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) |
TOSHIBA |
| 1316 |
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching Applications |
TOSHIBA |
| 1317 |
1SS372 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 1318 |
1SS373 |
DIODE (HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
| 1319 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 1320 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
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