| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
2N6784 |
N-Channel |
Microsemi |
| 1292 |
2N6784 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.25A |
Siliconix |
| 1293 |
2N6784E3 |
N-Channel |
Microsemi |
| 1294 |
2N6784U |
N-Channel |
Microsemi |
| 1295 |
2N6786 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
| 1296 |
2N6786 |
N-Channel |
Microsemi |
| 1297 |
2N6786 |
N-Channel MOSFET in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1298 |
2N6786 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.25A |
Siliconix |
| 1299 |
2N6786E3 |
N-Channel |
Microsemi |
| 1300 |
2N6786U |
N-Channel |
Microsemi |
| 1301 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
| 1302 |
2N6788 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
| 1303 |
2N6788 |
N-Channel |
Microsemi |
| 1304 |
2N6788 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 6A |
Siliconix |
| 1305 |
2N6788E3 |
N-Channel |
Microsemi |
| 1306 |
2N6788U |
N-Channel |
Microsemi |
| 1307 |
2N6790 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power |
Fairchild Semiconductor |
| 1308 |
2N6790 |
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
| 1309 |
2N6790 |
N-Channel |
Microsemi |
| 1310 |
2N6790 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
| 1311 |
2N6790E3 |
N-Channel |
Microsemi |
| 1312 |
2N6790U |
N-Channel |
Microsemi |
| 1313 |
2N6792 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
| 1314 |
2N6792 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2A |
Siliconix |
| 1315 |
2N6794 |
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
| 1316 |
2N6794 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 1317 |
2N6794 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 1.5 |
Siliconix |
| 1318 |
2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 1319 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
| 1320 |
2N6796 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
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