| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
KU1290-R |
90A 1200V Rectifier Diode |
IPRS Baneasa |
| 1292 |
KU1290-R-S |
90A 1200V Rectifier Diode |
IPRS Baneasa |
| 1293 |
KU1290-S |
90A 1200V Rectifier Diode |
IPRS Baneasa |
| 1294 |
KU1290R |
90A 1200V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| 1295 |
MAS110S12 |
1200V fast turn-off asymmetric thyristor/diode module |
Dynex Semiconductor |
| 1296 |
MCD132-12IO1 |
1200V thyristor modules thyristor/diode module |
IXYS |
| 1297 |
MCD220-12IO1 |
1200V thyristor modules thyristor/diode module |
IXYS |
| 1298 |
MCD225-12IO1 |
1200V thyristor modules thyristor/diode module |
IXYS |
| 1299 |
MCD250-12IO1 |
1200V thyristor modules thyristor/diode module |
IXYS |
| 1300 |
MCD255-12IO1 |
1200V thyristor modules thyristor/diode module |
IXYS |
| 1301 |
MCD310-12IO1 |
1200V thyristor modules thyristor/diode module |
IXYS |
| 1302 |
MCD312-12IO1 |
1200V thyristor modules thyristor/diode module |
IXYS |
| 1303 |
MCO500-12IO1 |
1200V high power thyristor module |
IXYS |
| 1304 |
MCR158-120 |
Integrated GATE THYRISTORS PNPN 110 Amperes RMS, 1200V |
Motorola |
| 1305 |
MCR159-120 |
Integrated GATE THYRISTORS PNPN 110 Amperes RMS, 1200V |
Motorola |
| 1306 |
MCR235-120 |
BEAM-FIRED Integrated Gate Thyristor 235A RMS, 1200V |
Motorola |
| 1307 |
MCR380-120 |
BEAM-FIRED Integrated Gate Thyristor 380A RMS, 1200V |
Motorola |
| 1308 |
MCR470-120 |
BEAM-FIRED Integrated Gate Thyristor 470A RMS, 1200V |
Motorola |
| 1309 |
MCR800-120 |
BEAM-FIRED Integrated Gate Thyristor 800A RMS, 1200V |
Motorola |
| 1310 |
MDD100N1200 |
100A 1200V Double-Diode Compact Module |
IPRS Baneasa |
| 1311 |
MDD125N1200 |
125A 1200V Double Diode Compact Module |
IPRS Baneasa |
| 1312 |
MDE-20D122K |
1200V; max peak current:75000A; metal oxide varistor. Standard D series 20mm disc |
MDE Semiconductor |
| 1313 |
MDE-25D122K |
1200V; max peak current:18000A; metal oxide varistor. Standard D series 25mm disc |
MDE Semiconductor |
| 1314 |
MDE-25S122K |
1200V; max peak current:20000A; metal oxide varistor. Standard S series 25mm disc |
MDE Semiconductor |
| 1315 |
MDE-32D122K |
1200V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 1316 |
MDE-34S122K |
1200V; max peak current:40000A; Tmax=14; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
| 1317 |
MDE-40D122K |
1200V; max peak current:40000A; metal oxide varistor. High energy series 40mm single disc |
MDE Semiconductor |
| 1318 |
MDE-53D122K |
1200V; max peak current:70000A; metal oxide varistor. High energy series 53mm single disc |
MDE Semiconductor |
| 1319 |
MDI145-12A3 |
1200V IGBT module |
IXYS |
| 1320 |
MDI200-12A4 |
1200V IGBT module |
IXYS |
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