| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
ICS84330CI |
720MHz, Low Jitter, Crystal-to-3.3V Differential LVPECL Frequency Synthesizer |
Texas Instruments |
| 1292 |
ICS84330CI |
720MHz, Low Jitter, Crystal-to-3.3V Differential LVPECL Frequency Synthesizer |
Texas Instruments |
| 1293 |
ICS84334 |
Multi-Rate LVPECL Frequency Synthesizer |
Texas Instruments |
| 1294 |
ICS84334 |
Multi-Rate LVPECL Frequency Synthesizer |
Texas Instruments |
| 1295 |
IDT71V433 |
32K X 32 Flow-Through Ouputs SRAM |
IDT |
| 1296 |
IDT71V433S11PF |
32K X 32 Flow-Through Ouputs SRAM |
IDT |
| 1297 |
IDT71V433S11PF8 |
32K X 32 Flow-Through Ouputs SRAM |
IDT |
| 1298 |
IDT72T51433 |
16Q x18 512K Multi-Queue, 2.5V |
IDT |
| 1299 |
IDT72T51433L5BB |
16Q x18 512K Multi-Queue, 2.5V |
IDT |
| 1300 |
IDT72T51433L5BB8 |
16Q x18 512K Multi-Queue, 2.5V |
IDT |
| 1301 |
IDT72T51433L6BB |
16Q x18 512K Multi-Queue, 2.5V |
IDT |
| 1302 |
IDT72T51433L6BB8 |
16Q x18 512K Multi-Queue, 2.5V |
IDT |
| 1303 |
IDT72T51433L6BBI |
16Q x18 512K Multi-Queue, 2.5V |
IDT |
| 1304 |
IDT72V51433 |
16Q x18 512K Multi-Queue, 3.3V |
IDT |
| 1305 |
IDT72V51433L6BB |
16Q x18 512K Multi-Queue, 3.3V |
IDT |
| 1306 |
IDT72V51433L6BB8 |
16Q x18 512K Multi-Queue, 3.3V |
IDT |
| 1307 |
IDT72V51433L7-5BB |
16Q x18 512K Multi-Queue, 3.3V |
IDT |
| 1308 |
IDT72V51433L7-5BB8 |
16Q x18 512K Multi-Queue, 3.3V |
IDT |
| 1309 |
IDT72V51433L7-5BBI |
16Q x18 512K Multi-Queue, 3.3V |
IDT |
| 1310 |
IFN5433 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 1311 |
IP4337CX18 |
7-channel integrated filter network with ESD input protection to IEC 61000-4-2 level 4 |
NXP Semiconductors |
| 1312 |
IP4338CX24 |
10-channel integrated filter network with ESD input protection to IEC 61000-4-2 level 4 |
NXP Semiconductors |
| 1313 |
IRF430-433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 1314 |
IRF433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 1315 |
IRF433 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 1316 |
IRF433 |
4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs |
Intersil |
| 1317 |
IRF433 |
Trans MOSFET N-CH 450V 4A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 1318 |
IRF433 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 1319 |
IRF433 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4A |
Siliconix |
| 1320 |
IRF7433 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
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