No. |
Part Name |
Description |
Manufacturer |
1291 |
ICS85322I |
Dual, LVCMOS / LVTTL-to-Differential 2.5V / 3.3V LVPECL Translator |
Texas Instruments |
1292 |
ICS8532AY-01 |
LOW SKEW, 1-TO-17 DIFFERENTIAL-TO-3.3V LVPECL FANOUT BUFFER |
Integrated Circuit Systems |
1293 |
ICS8532AY-01 |
Low Skew, 1-TO-17 Differential-to-3.3V LVPECL Fanout Buffer |
Texas Instruments |
1294 |
ICS8532AY-01 |
Low Skew, 1-TO-17 Differential-to-3.3V LVPECL Fanout Buffer |
Texas Instruments |
1295 |
ICS8532AY-01T |
LOW SKEW, 1-TO-17 DIFFERENTIAL-TO-3.3V LVPECL FANOUT BUFFER |
Integrated Circuit Systems |
1296 |
IDT72V15320 |
2K x 32 Multimedia FIFO, 3.3V |
IDT |
1297 |
IDT72V15320L10BBI |
2K x 32 Multimedia FIFO, 3.3V |
IDT |
1298 |
IDT72V15320L10BBI8 |
2K x 32 Multimedia FIFO, 3.3V |
IDT |
1299 |
IDT72V15320L10PFI |
2K x 32 Multimedia FIFO, 3.3V |
IDT |
1300 |
IDT72V15320L10PFI8 |
2K x 32 Multimedia FIFO, 3.3V |
IDT |
1301 |
ILC7082AIM532X |
0.15A Low Dropout Voltage Regulator |
Fairchild Semiconductor |
1302 |
ILX532A |
7500-pixel CCD Linear Sensor(B/W) |
SONY |
1303 |
INSTRUCTION SET |
S3C80F7/C80F9/C80G7/C80G9 (KS88C01524/C01532/C01624/C01632) Instruction Set |
Samsung Electronic |
1304 |
IRF532 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
1305 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
1306 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
1307 |
IRF532 |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
1308 |
IRF532 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
1309 |
IRF532 |
N-channel MOSFET, 100V, 12A |
SGS Thomson Microelectronics |
1310 |
IRF532 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
1311 |
IRF532F1 |
N-channel MOSFET, 100V, 8A |
SGS Thomson Microelectronics |
1312 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
1313 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
1314 |
IRF9532 |
TRANSISTORS |
International Rectifier |
1315 |
IRF9532 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
1316 |
IRF9532 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V 10A |
Siliconix |
1317 |
IRHF53230 |
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
International Rectifier |
1318 |
IRHM53260 |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
International Rectifier |
1319 |
IRHNA53260 |
200V, N-CHANNEL |
International Rectifier |
1320 |
IRHNJ53230 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
International Rectifier |
| | | |