| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
1S1887A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1292 |
1S1888 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1293 |
1S1888A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
| 1294 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1295 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1296 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 1297 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1298 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1299 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 1300 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 1301 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 1302 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 1303 |
1S2092 |
Silicon epitaxial planar type diode. |
Panasonic |
| 1304 |
1S2092 |
SILICON EPTAXIAL PLANAR TYPE |
TOSHIBA |
| 1305 |
1S2094 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 1306 |
1S2095A |
Silicon epitaxial planar type diode. |
Panasonic |
| 1307 |
1S2095A |
SILICON EPITAXIAL PLANAR TYPE DIODE |
TOSHIBA |
| 1308 |
1S2186 |
Silicon epitaxial planar type diode. |
Panasonic |
| 1309 |
1S2186 |
SILICON EPITAXIAL PLANAR TYPE |
TOSHIBA |
| 1310 |
1S2236 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 1311 |
1S2236 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
TOSHIBA |
| 1312 |
1S2460 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 1313 |
1S2461 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 1314 |
1S2462 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 1315 |
1S920 |
General purpose diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 1316 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1317 |
1S921 |
General purpose diode. Working inverse voltage 100 V. |
Fairchild Semiconductor |
| 1318 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1319 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1320 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
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