| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
2N5492 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 1292 |
2N5494 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 |
SESCOSEM |
| 1293 |
2N5494 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 1294 |
2N5496 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 |
SESCOSEM |
| 1295 |
2N5496 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 1296 |
2N5515 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1297 |
2N5516 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1298 |
2N5517 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1299 |
2N5518 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1300 |
2N5519 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1301 |
2N5520 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1302 |
2N5521 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1303 |
2N5522 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1304 |
2N5523 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1305 |
2N5524 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 1306 |
2N5550 |
Amplifier Transistors |
Motorola |
| 1307 |
2N5550 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 1308 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1309 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1310 |
2N5550-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 1311 |
2N5550RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 1312 |
2N5550RLRP |
Small Signal Amplifier NPN |
ON Semiconductor |
| 1313 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 1314 |
2N5551 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1315 |
2N5551 |
Amplifier Transistors |
Motorola |
| 1316 |
2N5551 |
NPN General Purpose Amplifier |
National Semiconductor |
| 1317 |
2N5551 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 1318 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1319 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1320 |
2N5551BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
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