| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
PMPB10EN |
30 V, N-channel MOSFET |
Nexperia |
| 1292 |
PSMN011-100YSF |
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 1293 |
PSMN018-100ESF |
NextPower 100 V, 18 mΩ N-channel MOSFET in I2PAK package |
Nexperia |
| 1294 |
PSMN018-100PSF |
NextPower 100 V, 18 mΩ N-channel MOSFET in TO220 package |
Nexperia |
| 1295 |
PSMN3R9-100YSF |
NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 1296 |
PSMN6R9-100YSF |
NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 1297 |
PSMN8R5-100ESF |
NextPower 100 V, 8.8 mΩ N-channel MOSFET in I2PAK package |
Nexperia |
| 1298 |
PSMN8R5-100PSF |
NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package |
Nexperia |
| 1299 |
PSMN8R7-100YSF |
NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 1300 |
Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 1301 |
Q62702-F1487 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 1302 |
Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1303 |
Q62702-F1586 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 1304 |
Q62702-F1587 |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1305 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 1306 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1307 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 1308 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1309 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1310 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1311 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1312 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1313 |
RFY220 |
N-Channel MOSFET in a Hermetically sealed to257AB Metal Package. |
SemeLAB |
| 1314 |
SD1900 |
2-400MHz 5W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 1315 |
SD1900-1 |
2-400MHz 5W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 1316 |
SD1902 |
2-400MHz 15W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 1317 |
SD1902-1 |
2-400MHz 15W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 1318 |
SD1904 |
2-400MHz 30W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 1319 |
SD1904-1 |
2-400MHz 30W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 1320 |
SD1905 |
2-200MHz 45W 28V HF/VHF N-Channel MOSFET |
SGS Thomson Microelectronics |
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