| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
MAX9939AUB/V+T |
SPI-Programmable Gain Amplifier (PGA) with Input VOS Trim and Output Op Amp |
MAXIM - Dallas Semiconductor |
| 1292 |
MC1066 |
ACPI-Compliant SMBus Temperature Sensor with Internal and External Diode Input |
ON Semiconductor |
| 1293 |
MC1066-D |
ACPI-Compliant SMBus Temperature Sensor with Internal and External Diode Input |
ON Semiconductor |
| 1294 |
MC1066DBR2 |
ACPI-Compliant SMBus Temperature Sensor with Internal and External Diode Input |
ON Semiconductor |
| 1295 |
MG1041 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 1296 |
MG1042 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 1297 |
MG1043 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 1298 |
MG1044 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 1299 |
MG1045 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 1300 |
MG1046 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 1301 |
MG1052 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 1302 |
MG1054 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 1303 |
MG1056 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 1304 |
MG1058 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 1305 |
MG1059 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 1306 |
MP4208 |
Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 1307 |
MP4209 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1308 |
MP4210 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1309 |
MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1310 |
MP4212 |
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch Driver |
TOSHIBA |
| 1311 |
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 1312 |
MP4411 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1313 |
MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1314 |
MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1315 |
MP6404 |
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 6 in 1) High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications |
TOSHIBA |
| 1316 |
MPI-3401 |
Silicon PIN Switching MICRO-I Diode |
Motorola |
| 1317 |
MX26C1000BPI-10 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 1318 |
MX26C1000BPI-12 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 1319 |
MX26C1000BPI-15 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
| 1320 |
MX26C1000BPI-90 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
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