| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
MUR160 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Recovery Time 50ns |
Vishay |
| 1292 |
MURS140 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Recovery Time 50ns |
Vishay |
| 1293 |
MURS160 |
Ultrafast Plastic Rectifier, Forward Current 1.0A, Reverse Recovery Time 50ns |
Vishay |
| 1294 |
MURS340 |
Ultrafast Rectifiers, Forward Current 3.0A, Reverse Recovery Time 50ns |
Vishay |
| 1295 |
MURS360 |
Ultrafast Rectifiers, Forward Current 3.0A, Reverse Recovery Time 50ns |
Vishay |
| 1296 |
NCP51190 |
1.5A DDR Memory Termination Regulator |
ON Semiconductor |
| 1297 |
NCP51198 |
1.5A DDR Memory Termination Regulator |
ON Semiconductor |
| 1298 |
NDF7-17P-2.54DSA |
2.54mm Pitch Bottom Entry Type Connector |
Hirose Electric |
| 1299 |
NE57810 |
Advanced DDR memory termination power with external reference in |
Philips |
| 1300 |
NE57810S |
Advanced DDR memory termination power with external reference in |
Philips |
| 1301 |
NE57810TK |
Advanced DDR memory termination power with external reference voltage in |
NXP Semiconductors |
| 1302 |
NE57811 |
Advanced DDR memory termination power with shutdown |
Philips |
| 1303 |
NE57811S |
Advanced DDR memory termination power with shutdown |
Philips |
| 1304 |
NE57814 |
DDR memory termination regulator with standby mode and enhanced efficiency |
Philips |
| 1305 |
NE57814DD |
DDR memory termination regulator with standby mode and enhanced efficiency |
NXP Semiconductors |
| 1306 |
NE57814DD |
DDR memory termination regulator with standby mode and enhanced efficiency |
Philips |
| 1307 |
NJL0281D |
Complementary ThermalTrak™ Transistors |
ON Semiconductor |
| 1308 |
NJL1302D |
Complementary ThermalTrak Transistors |
ON Semiconductor |
| 1309 |
NJL21193.REVP0 |
Complementary ThermalTrak™ Transistors |
ON Semiconductor |
| 1310 |
NJL3281D |
Complementary ThermalTrak Transistors |
ON Semiconductor |
| 1311 |
NJL4281D |
Complementary ThermalTrak™ Transistors |
ON Semiconductor |
| 1312 |
NMC27C32BQ150 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
| 1313 |
NMC27C32BQ200 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
| 1314 |
NSM21156DW6 |
Dual Complementary Transistors (NPN BRT & General Purpose PNP) |
ON Semiconductor |
| 1315 |
NSM21356DW6 |
Dual Complementary Transistors (NPN BRT & General Purpose PNP) |
ON Semiconductor |
| 1316 |
NTE100 |
Germanium Complementary Transistors Oscillator, Mixer for AM Radio, Medium Speed Switch |
NTE Electronics |
| 1317 |
NTE101 |
Germanium complementary transistor NPN oscillator, mixer for AM radio, medium speed switch. Collector-base voltage 25 V. Collector-emitter voltage 25V. Emitter-base voltage 25V. Collector current 300mA. |
NTE Electronics |
| 1318 |
NTE102 |
Germanium Complementary Transistors Power Output, Driver |
NTE Electronics |
| 1319 |
NTE102A |
Germanium Complementary Transistors Medium Power Amplifier |
NTE Electronics |
| 1320 |
NTE103 |
Germanium complementary transistor NPN power output, driver. |
NTE Electronics |
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