| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
2N2819 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1292 |
2N2820 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1293 |
2N2821 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1294 |
2N2822 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1295 |
2N2823 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1296 |
2N2824 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1297 |
2N2825 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1298 |
2N2837 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1299 |
2N2837 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 1300 |
2N2838 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1301 |
2N2838 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 1302 |
2N2841 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 1303 |
2N2842 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 1304 |
2N2843 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 1305 |
2N2844 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 1306 |
2N2845 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1307 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1308 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1309 |
2N2847 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1310 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1311 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
| 1312 |
2N2854 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1313 |
2N2855 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1314 |
2N2857 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1315 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 1316 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 1317 |
2N2857CSM |
HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1318 |
2N2861 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1319 |
2N2862 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1320 |
2N2865 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
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