| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
12IMR40-24-2 |
25...40 Watt DC-DC Converters |
Power-One |
| 1292 |
12IMR6-03-2 |
3...15 Watt DC-DC Converter |
Power-One |
| 1293 |
12IMR6-05-2 |
3...15 Watt DC-DC Converter |
Power-One |
| 1294 |
12IMR6-0505-2 |
3...15 Watt DC-DC Converter |
Power-One |
| 1295 |
12IMR6-12-2 |
3...15 Watt DC-DC Converter |
Power-One |
| 1296 |
12IMR6-1212-2 |
3...15 Watt DC-DC Converter |
Power-One |
| 1297 |
12IMR6-15-2 |
3...15 Watt DC-DC Converter |
Power-One |
| 1298 |
12IMR6-1515-2 |
3...15 Watt DC-DC Converter |
Power-One |
| 1299 |
13003BR |
POWER TRANSISTORS(1.5A,300-400V,40W) |
MOSPEC Semiconductor |
| 1300 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
| 1301 |
1307036 |
The Powerpuck GPS Antenna |
Tyco Electronics |
| 1302 |
132-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1303 |
133-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1304 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1305 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1306 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 1307 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 1308 |
150K100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1309 |
150K20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1310 |
150K40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1311 |
150K60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1312 |
150K80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1313 |
150KR100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1314 |
150KR20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1315 |
150KR40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1316 |
150KR60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1317 |
150KR80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 1318 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 1319 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 1320 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
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