No. |
Part Name |
Description |
Manufacturer |
1291 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
1292 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
1293 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
1294 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
1295 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
1296 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
1297 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
1298 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
1299 |
HY51VS65163HG |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
1300 |
HY51VS65163HGJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
1301 |
HY51VS65163HGJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
1302 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
1303 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
1304 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1305 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
1306 |
HY51VS65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
1307 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1308 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
1309 |
HY51VS65163HGT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
1310 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
1311 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
1312 |
HY534256A |
256K x 4-bit CMOS DRAM |
Hynix Semiconductor |
1313 |
HY534256AJ |
256K x 4-bit CMOS DRAM |
Hynix Semiconductor |
1314 |
HY534256AJ-45 |
256K x 4-bit CMOS DRAM, 45ns |
Hynix Semiconductor |
1315 |
HY534256AJ-50 |
256K x 4-bit CMOS DRAM, 50ns |
Hynix Semiconductor |
1316 |
HY534256AJ-60 |
256K x 4-bit CMOS DRAM, 60ns |
Hynix Semiconductor |
1317 |
HY534256AJ-70 |
256K x 4-bit CMOS DRAM, 70ns |
Hynix Semiconductor |
1318 |
HY534256AJ-80 |
256K x 4-bit CMOS DRAM, 80ns |
Hynix Semiconductor |
1319 |
HY534256ALJ |
256K x 4-bit CMOS DRAM |
Hynix Semiconductor |
1320 |
HY534256ALJ-45 |
256K x 4-bit CMOS DRAM, 45ns, low power |
Hynix Semiconductor |
| | | |