| No. |
Part Name |
Description |
Manufacturer |
| 12931 |
1N6385 |
Diode TVS Single Bi-Dir 15V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12932 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12933 |
1N6386 |
Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12934 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12935 |
1N6387 |
Diode TVS Single Bi-Dir 22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12936 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12937 |
1N6388 |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12938 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12939 |
1N6389 |
Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12940 |
1N6391 |
Diode Schottky 45V 25A 2-Pin DO-4 |
New Jersey Semiconductor |
| 12941 |
1N6392 |
Diode Schottky 45V 60A 2-Pin DO-5 |
New Jersey Semiconductor |
| 12942 |
1N63A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 12943 |
1N63A |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
| 12944 |
1N64 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 12945 |
1N643 |
Silicon Planar Diode |
ITT Semiconductors |
| 12946 |
1N643A |
Silicon Planar Diode |
ITT Semiconductors |
| 12947 |
1N645 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 12948 |
1N645 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 12949 |
1N645 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 12950 |
1N645A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 12951 |
1N646 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 12952 |
1N646 |
Diode 300V 0.4A 2-Pin DO-35 |
New Jersey Semiconductor |
| 12953 |
1N646A |
Diode 300V 0.4A 2-Pin DO-35 |
New Jersey Semiconductor |
| 12954 |
1N647 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 12955 |
1N647 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 12956 |
1N647 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 12957 |
1N6478 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 12958 |
1N6479 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 12959 |
1N648 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 12960 |
1N648 |
Diode 500V 0.4A 2-Pin DO-35 |
New Jersey Semiconductor |
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