| No. |
Part Name |
Description |
Manufacturer |
| 12931 |
RHY11 |
Axial magnetic field probe |
Siemens |
| 12932 |
RHY11 |
Hall-effect device measuring axial magnetic field |
Siemens |
| 12933 |
RHY17 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 12934 |
RHY18 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 12935 |
RHY18-S1 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 12936 |
RHY19 |
Hall generator - field probe |
Siemens |
| 12937 |
RHY19 |
Hall-effect devices for measuring AC und DC magnetic fields |
Siemens |
| 12938 |
ROS01 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 12939 |
ROS02 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 12940 |
ROS04 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 12941 |
ROS05 |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 12942 |
ROS05A |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 12943 |
ROS05B |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 12944 |
ROS05C |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 12945 |
ROS05D |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 12946 |
ROS7N |
N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
| 12947 |
RVM35A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12948 |
RVM35A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12949 |
RVM35B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12950 |
RVM35B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12951 |
RVM60A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12952 |
RVM60A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12953 |
RVM60B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12954 |
RVM60B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 12955 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
| 12956 |
S525 |
N-Channel MOS-Fieldeffect Triode/ Depletion Mode |
Vishay |
| 12957 |
S525T |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 12958 |
S525TW |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 12959 |
SAA4955 |
2.9-Mbit field memory |
Philips |
| 12960 |
SAA4955TJ |
2.9-Mbit field memory |
Philips |
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