| No. |
Part Name |
Description |
Manufacturer |
| 12931 |
IXSH15N120BD1 |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 12932 |
IXSH30N60AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability |
IXYS Corporation |
| 12933 |
IXSH30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 12934 |
IXSH30N60U1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability |
IXYS Corporation |
| 12935 |
IXSH50N60B |
Short Circuit SOA Capability |
IXYS Corporation |
| 12936 |
IXSK30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 12937 |
IXSP15N120B |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 12938 |
IXST15N120BD1 |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 12939 |
IXST30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 12940 |
JAN-2N1118 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 12941 |
JAN-2N1119 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 12942 |
JAN-2N128 |
SBT PNP switch - germanium transistor, military version |
Sprague |
| 12943 |
JAN-2N240 |
SBT PNP switch - germanium transistor, military version |
Sprague |
| 12944 |
JAN-2N393 |
MAT® PNP switch - germanium transistor, military version |
Sprague |
| 12945 |
JAN1N4372 |
Military Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V |
Transitron Electronic |
| 12946 |
JAN2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 12947 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12948 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12949 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12950 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12951 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12952 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12953 |
JAN2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 12954 |
JANSPA25 |
RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES/ 25 AMP/ MILITARY APPROVED |
Microsemi |
| 12955 |
JANSPB25 |
RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES/ 25 AMP/ MILITARY APPROVED |
Microsemi |
| 12956 |
JANSPC25 |
RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES/ 25 AMP/ MILITARY APPROVED |
Microsemi |
| 12957 |
JANSPD25 |
RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES/ 25 AMP/ MILITARY APPROVED |
Microsemi |
| 12958 |
K2010A |
High reliability photocoupler, isolation 5000V, CTR=60 to 160% |
Cosmo Electronics |
| 12959 |
K2010B |
High reliability photocoupler, isolation 5000V, CTR=130 to 260% |
Cosmo Electronics |
| 12960 |
K2010C |
High reliability photocoupler, isolation 5000V, CTR=200 to 400% |
Cosmo Electronics |
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