No. |
Part Name |
Description |
Manufacturer |
12961 |
BCY86 |
NPN Epitaxial Planar Silicon Transistor |
Texas Instruments |
12962 |
BD895 |
45 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
12963 |
BD895A |
45 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
12964 |
BD896 |
45 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
12965 |
BD896A |
45 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
12966 |
BD897 |
60 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
12967 |
BD897A |
60 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
12968 |
BD898 |
60 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
12969 |
BD898A |
60 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
12970 |
BD899 |
80 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
12971 |
BD899A |
80 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
12972 |
BD900 |
80 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
12973 |
BD900A |
80 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
12974 |
BD901 |
100 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
12975 |
BD902 |
100 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
12976 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
12977 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
12978 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
12979 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
12980 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
12981 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
12982 |
BF158 |
Silicon Planar NPN RF transistor designed for use as IF amplifier in TV receivers |
SGS-ATES |
12983 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
12984 |
BF177 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
12985 |
BF178 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
12986 |
BF179 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
12987 |
BF224 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
12988 |
BF237 |
NPN Silicon Epitaxial Planar Transistor |
Texas Instruments |
12989 |
BF238 |
NPN Silicon Epitaxial Planar Transistor |
Texas Instruments |
12990 |
BF244 |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
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