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Datasheets for AS

Datasheets found :: 231616
Page: | 429 | 430 | 431 | 432 | 433 | 434 | 435 | 436 | 437 |
No. Part Name Description Manufacturer
12961 BCY86 NPN Epitaxial Planar Silicon Transistor Texas Instruments
12962 BD895 45 V, 8 A, 70 W, NPN silicon power darlington Texas Instruments
12963 BD895A 45 V, 8 A, 70 W, NPN silicon power darlington Texas Instruments
12964 BD896 45 V, 8 A, 70 W, P-N-P silicon power darlington Texas Instruments
12965 BD896A 45 V, 8 A, 70 W, P-N-P silicon power darlington Texas Instruments
12966 BD897 60 V, 8 A, 70 W, NPN silicon power darlington Texas Instruments
12967 BD897A 60 V, 8 A, 70 W, NPN silicon power darlington Texas Instruments
12968 BD898 60 V, 8 A, 70 W, P-N-P silicon power darlington Texas Instruments
12969 BD898A 60 V, 8 A, 70 W, P-N-P silicon power darlington Texas Instruments
12970 BD899 80 V, 8 A, 70 W, NPN silicon power darlington Texas Instruments
12971 BD899A 80 V, 8 A, 70 W, NPN silicon power darlington Texas Instruments
12972 BD900 80 V, 8 A, 70 W, P-N-P silicon power darlington Texas Instruments
12973 BD900A 80 V, 8 A, 70 W, P-N-P silicon power darlington Texas Instruments
12974 BD901 100 V, 8 A, 70 W, NPN silicon power darlington Texas Instruments
12975 BD902 100 V, 8 A, 70 W, P-N-P silicon power darlington Texas Instruments
12976 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
12977 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
12978 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
12979 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
12980 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
12981 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
12982 BF158 Silicon Planar NPN RF transistor designed for use as IF amplifier in TV receivers SGS-ATES
12983 BF166 Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier SGS-ATES
12984 BF177 NPN Epitaxial Silicon Planar Transistor Texas Instruments
12985 BF178 NPN Epitaxial Silicon Planar Transistor Texas Instruments
12986 BF179 NPN Epitaxial Silicon Planar Transistor Texas Instruments
12987 BF224 NPN Epitaxial Silicon Planar Transistor Texas Instruments
12988 BF237 NPN Silicon Epitaxial Planar Transistor Texas Instruments
12989 BF238 NPN Silicon Epitaxial Planar Transistor Texas Instruments
12990 BF244 N-Channel Epitaxial Planar Silicon Field Effect Transistor Texas Instruments


Datasheets found :: 231616
Page: | 429 | 430 | 431 | 432 | 433 | 434 | 435 | 436 | 437 |



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