| No. |
Part Name |
Description |
Manufacturer |
| 12991 |
TA7303 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 12992 |
TA7319 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 12993 |
TA76 |
Epitaxial Planar Silicon Transistor Arrays |
ROHM |
| 12994 |
TBC327 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 12995 |
TBC328 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 12996 |
TBC337 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 12997 |
TBC338 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 12998 |
TBC546 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 12999 |
TBC547 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13000 |
TBC548 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13001 |
TBC549 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13002 |
TBC550 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13003 |
TBC556 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13004 |
TBC557 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13005 |
TBC558 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13006 |
TBC559 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13007 |
TBC560 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13008 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 13009 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 13010 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 13011 |
TEC8012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13012 |
TEC8013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13013 |
TEC9011 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13014 |
TEC9012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13015 |
TEC9013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13016 |
TEC9014 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13017 |
TEC9015 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13018 |
TEC9016 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13019 |
TED1402 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13020 |
TED1502 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| | | |
