| No. |
Part Name |
Description |
Manufacturer |
| 12991 |
GT400E/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12992 |
GT400E/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
| 12993 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 12994 |
GT40J121 |
IGBT for soft switching applications |
TOSHIBA |
| 12995 |
GT40J321 |
IGBT for soft switching applications |
TOSHIBA |
| 12996 |
GT40J322 |
IGBT for soft switching applications |
TOSHIBA |
| 12997 |
GT40J325 |
IGBT for soft switching applications |
TOSHIBA |
| 12998 |
GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 12999 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 13000 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 13001 |
GT40Q322 |
Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 13002 |
GT40QR21 |
IGBT for soft switching applications |
TOSHIBA |
| 13003 |
GT40RR21 |
IGBT for soft switching applications |
TOSHIBA |
| 13004 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 13005 |
GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications |
TOSHIBA |
| 13006 |
GT40T321 |
IGBT for soft switching applications |
TOSHIBA |
| 13007 |
GT40WR21 |
IGBT for soft switching applications |
TOSHIBA |
| 13008 |
GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 13009 |
GT50J102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 13010 |
GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 13011 |
GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 13012 |
GT50J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 13013 |
GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 13014 |
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 13015 |
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 13016 |
GT50JR21 |
IGBT for soft switching applications |
TOSHIBA |
| 13017 |
GT50JR22 |
IGBT for soft switching applications |
TOSHIBA |
| 13018 |
GT50MR21 |
IGBT for soft switching applications |
TOSHIBA |
| 13019 |
GT50N322A |
IGBT for soft switching applications |
TOSHIBA |
| 13020 |
GT50NR21 |
IGBT for soft switching applications |
TOSHIBA |
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