No. |
Part Name |
Description |
Manufacturer |
13051 |
BAT15-104 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
13052 |
BAT15-113 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
13053 |
BAT15-114 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
13054 |
BAT15-123 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
13055 |
BAT15-124 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
13056 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
13057 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
13058 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
13059 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
13060 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
13061 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
13062 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
13063 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
13064 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
13065 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
13066 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
13067 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
13068 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
13069 |
BFY181 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
13070 |
BFY182 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
13071 |
BFY183 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
13072 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
13073 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
13074 |
BFY280 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
13075 |
BTA105M2-A_00 |
NPN silicon matched microwave transistor. |
BOPOLARICS |
13076 |
BTA105M2-A_08 |
NPN silicon matched microwave transistor. |
BOPOLARICS |
13077 |
BTA105M2-B_S8 |
NPN silicon matched microwave transistor. |
BOPOLARICS |
13078 |
BU24591 |
Optical Disc LSIs > CD microcontroller |
ROHM |
13079 |
BU9888FV-W |
High Speed MicroWire BUS(3-Wire) Serial EEPROM |
ROHM |
13080 |
BU9888FV-WE2 |
High Speed MicroWire BUS(3-Wire) Serial EEPROM |
ROHM |
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