| No. |
Part Name |
Description |
Manufacturer |
| 13081 |
SY625/05-to-SY625/2 |
Fast epitaxial power rectifier diodes, possibly equivalent BYW31 |
RFT |
| 13082 |
SY710 |
Fast epitaxial power rectifier diode, possibly equivalent BYW29 |
RFT |
| 13083 |
SY715 |
Fast epitaxial power rectifier diode, possibly equivalent BYV79 |
RFT |
| 13084 |
TA1275 |
EPITAXIAL PLANAR PNP TRANSISTOR (COLOR TV VERTICAL DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT) |
Korea Electronics (KEC) |
| 13085 |
TA7303 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 13086 |
TA7319 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 13087 |
TA76 |
Epitaxial Planar Silicon Transistor Arrays |
ROHM |
| 13088 |
TBC327 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13089 |
TBC328 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13090 |
TBC337 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13091 |
TBC338 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13092 |
TBC546 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13093 |
TBC547 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13094 |
TBC548 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13095 |
TBC549 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13096 |
TBC550 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13097 |
TBC556 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13098 |
TBC557 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13099 |
TBC558 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13100 |
TBC559 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13101 |
TBC560 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13102 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 13103 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 13104 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 13105 |
TEC8012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13106 |
TEC8013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13107 |
TEC9011 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13108 |
TEC9012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13109 |
TEC9013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
| 13110 |
TEC9014 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
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