| No. |
Part Name |
Description |
Manufacturer |
| 13111 |
JV5819UR-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13112 |
JV5822 |
3 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13113 |
JV5822US |
3 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13114 |
JV6761-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13115 |
JV6761UR-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13116 |
JX5819-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13117 |
JX5819UR-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13118 |
JX5822 |
3 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13119 |
JX5822US |
3 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13120 |
JX6761-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13121 |
JX6761UR-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 13122 |
K4D623238B-G(Q)C |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet |
Samsung Electronic |
| 13123 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 13124 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 13125 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 13126 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 13127 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 13128 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 13129 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 13130 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 13131 |
K4E16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 13132 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 13133 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 13134 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 13135 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 13136 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 13137 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 13138 |
K4E160811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 13139 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 13140 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
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