DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for RANSISTO

Datasheets found :: 95977
Page: | 436 | 437 | 438 | 439 | 440 | 441 | 442 | 443 | 444 |
No. Part Name Description Manufacturer
13171 2N6036 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. Continental Device India Limited
13172 2N6036 TO-126 Plastic-Encapsulate Biploar Transistors Micro Commercial Components
13173 2N6036 PNP Power Transistor TO-126 National Semiconductor
13174 2N6036 PNP Power Transistor National Semiconductor
13175 2N6036 PNP silicon power transistor 40W/4A National Semiconductor
13176 2N6036 Silicon PNP Power Transistors TO-126 package Savantic
13177 2N6036 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS Thomson Microelectronics
13178 2N6036 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS Thomson Microelectronics
13179 2N6036 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
13180 2N6036 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES
13181 2N6036 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ST Microelectronics
13182 2N6037 Leaded Power Transistor Darlington Central Semiconductor
13183 2N6037 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
13184 2N6037 NPN Power Transistor TO-126 National Semiconductor
13185 2N6037 NPN Power Transistor National Semiconductor
13186 2N6037 NPN silicon power transistor 40W/4A National Semiconductor
13187 2N6037 Silicon NPN Power Transistors TO-126 package Savantic
13188 2N6037 NPN medium power darlington transistor, 4A , 40V SGS Thomson Microelectronics
13189 2N6037 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
13190 2N6037 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES
13191 2N6038 Leaded Power Transistor Darlington Central Semiconductor
13192 2N6038 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
13193 2N6038 NPN Power Transistor TO-126 National Semiconductor
13194 2N6038 NPN Power Transistor National Semiconductor
13195 2N6038 NPN silicon power transistor 40W/4A National Semiconductor
13196 2N6038 Plastic Darlington Complementary Silicon Power Transistors ON Semiconductor
13197 2N6038 Silicon NPN Power Transistors TO-126 package Savantic
13198 2N6038 NPN medium power darlington transistor, 4A , 60V SGS Thomson Microelectronics
13199 2N6038 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
13200 2N6038 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES


Datasheets found :: 95977
Page: | 436 | 437 | 438 | 439 | 440 | 441 | 442 | 443 | 444 |



© 2024 - www Datasheet Catalog com