| No. |
Part Name |
Description |
Manufacturer |
| 13201 |
P0102AL-5AA4 |
Sensitive gate SCRs |
ST Microelectronics |
| 13202 |
P0102BA |
Sensitive gate SCR, 200V |
SGS Thomson Microelectronics |
| 13203 |
P0102BB |
Sensitive gate SCR, 200V |
SGS Thomson Microelectronics |
| 13204 |
P0102CA |
Sensitive gate SCR, 300V |
SGS Thomson Microelectronics |
| 13205 |
P0102CB |
Sensitive gate SCR, 300V |
SGS Thomson Microelectronics |
| 13206 |
P0102DB |
Sensitive gate SCR, 400V |
SGS Thomson Microelectronics |
| 13207 |
P0102DB |
SENSITIVE GATE SCR |
ST Microelectronics |
| 13208 |
P0109AL-5AA4 |
Sensitive gate SCRs |
ST Microelectronics |
| 13209 |
P0109DA-1AA3 |
Sensitive gate SCRs |
ST Microelectronics |
| 13210 |
P0109DA-5AL3 |
Sensitive gate SCRs |
ST Microelectronics |
| 13211 |
P010XX |
Sensitive gate SCRs |
ST Microelectronics |
| 13212 |
P0118MA-5AL3 |
0.8A sensitive gate SCRs |
ST Microelectronics |
| 13213 |
P011XX |
0.8A sensitive gate SCRs |
ST Microelectronics |
| 13214 |
P01XXXA |
SENSITIVE GATE SCR |
ST Microelectronics |
| 13215 |
P01XXXB |
SENSITIVE GATE SCR |
ST Microelectronics |
| 13216 |
P121 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 13217 |
P122 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 13218 |
P123 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 13219 |
P124 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 13220 |
P281 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 13221 |
P282 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 13222 |
P40NF10L |
N-CHANNEL 100V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
| 13223 |
PAL20L8 |
MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
| 13224 |
PAL20R4 |
MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
| 13225 |
PAL20R6 |
MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
| 13226 |
PAL20R8 |
MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
| 13227 |
PB-IRF6609 |
Leaded A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13228 |
PB-IRF6613 |
Leaded A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13229 |
PB-IRF6618 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13230 |
PB-IRF6678 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
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