No. |
Part Name |
Description |
Manufacturer |
1321 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
1322 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
1323 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
1324 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
1325 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
1326 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
1327 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
1328 |
BD800 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. |
General Electric Solid State |
1329 |
BD801 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. |
General Electric Solid State |
1330 |
BD802 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -100V, 65W. |
General Electric Solid State |
1331 |
BD895 |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
1332 |
BD895A |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
1333 |
BD897 |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
1334 |
BD897A |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
1335 |
BD899 |
8 A N-P-N darlington power transistor. 80 V. 70 W. |
General Electric Solid State |
1336 |
BD899A |
8 A N-P-N darlington power transistor. 80 V. 70 W. |
General Electric Solid State |
1337 |
BD901 |
8 A N-P-N darlington power transistor. 100 V. 70 W. |
General Electric Solid State |
1338 |
BDY29 |
HIGH POWER HIGH CURRENT TRANSISTOR |
General Electric Solid State |
1339 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1340 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1341 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
1342 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
1343 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1344 |
BT100A-300R |
Thyristors and stacks thyristors |
Mullard |
1345 |
BT100A-500R |
Thyristors and stacks thyristors |
Mullard |
1346 |
BTA22 |
10-A SILICON TRIACS |
General Electric Solid State |
1347 |
BTA22B |
10-A SILICON TRIACS |
General Electric Solid State |
1348 |
BTA22C |
10-A SILICON TRIACS |
General Electric Solid State |
1349 |
BTA22D |
10-A SILICON TRIACS |
General Electric Solid State |
1350 |
BTA22E |
10-A SILICON TRIACS |
General Electric Solid State |
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