No. |
Part Name |
Description |
Manufacturer |
1321 |
MAX6737XKYDD3-T |
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1322 |
MAX6737XKYFD3-T |
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1323 |
MAX6737XKYHD3-T |
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1324 |
MAX6737XKYVD3-T |
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1325 |
MAX6737XKZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1326 |
MAX6737XKZGD3-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1327 |
MAX6737XKZID3-T |
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1328 |
MAX6737XKZWD3-T |
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1329 |
MAX6738XKLD3-T |
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1330 |
MAX6738XKMD3-T |
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1331 |
MAX6738XKRD3-T |
Vcc1: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1332 |
MAX6738XKSD3-T |
Vcc1: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1333 |
MAX6738XKTD3-T |
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1334 |
MAX6738XKVD3-T |
Vcc1: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1335 |
MAX6738XKWD3-T |
Vcc1: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1336 |
MAX6738XKYD3-T |
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1337 |
MAX6738XKZD3-T |
Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1338 |
MAX6739XKLD3-T |
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1339 |
MAX6739XKMD3-T |
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1340 |
MAX6739XKRD3-T |
Vcc1: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1341 |
MAX6739XKSD3-T |
Vcc1: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1342 |
MAX6739XKTD3-T |
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1343 |
MAX6739XKVD3-T |
Vcc1: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1344 |
MAX6739XKWD3-T |
Vcc1: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1345 |
MAX6739XKYD3-T |
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1346 |
MAX6739XKZD3-T |
Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1347 |
MAX6740XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1348 |
MAX6740XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1349 |
MAX6740XKMSD3-T |
Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1350 |
MAX6740XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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