| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
5962-9751301Q2A |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1322 |
5962-9751301Q2A |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1323 |
5962-9751301QHA |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1324 |
5962-9751301QHA |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1325 |
5962-9751301QHA |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1326 |
5962-9751301QPA |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1327 |
5962-9751301QPA |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1328 |
5962-9751301QPA |
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs |
Texas Instruments |
| 1329 |
5DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1330 |
5DL2C48A |
HighEfficiencyDiodeStack (HED) Silicon Epitaxial Type Switching Mode Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 1331 |
5DL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1332 |
5DLZ47A |
HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1333 |
5FL2C48A |
HighEfficiencyDiodeStack (HED) Silicon Epitaxial Type Switching Mode Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 1334 |
5FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1335 |
5FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1336 |
5FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1337 |
5GL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1338 |
5GLZ47A |
HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1339 |
5GUZ47 |
HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1340 |
5GWJ2C42 |
SCHOTTKY BARRIER TYPE (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER APPLICATIONS) |
TOSHIBA |
| 1341 |
5GWJ2C48C |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1342 |
5GWJ2CZ47C |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1343 |
5JL2CZ47 |
HIGH EFFICIENCY DIODE STACE (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1344 |
5JLZ47 |
HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1345 |
5JLZ47A |
HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1346 |
5JUZ47 |
SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 1347 |
5KP10 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:50-110V PEAK PULSE POWER: 5000W |
Shanghai Sunrise Electronics |
| 1348 |
5KP100 |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1349 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 1350 |
5KP100A |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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