| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
DE475-102N20A |
RF power MOSFET |
IXYS |
| 1322 |
DE475-102N21A |
RF Power MOSFET |
Directed Energy |
| 1323 |
DE475-102N21A |
RF power MOSFET |
IXYS |
| 1324 |
DE475-501N44A |
RF Power MOSFET |
Directed Energy |
| 1325 |
DE475-501N44A |
RF power MOSFET |
IXYS |
| 1326 |
DME150 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 1327 |
DME375A |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 1328 |
DME500 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 1329 |
DME800 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 1330 |
DRF1401 |
UHF POWER TRANSISTOR |
etc |
| 1331 |
DRF1402F |
UHF POWER TRANSISTOR |
etc |
| 1332 |
DS1870 |
LDMOS RF Power-Amplifier Bias Controller |
MAXIM - Dallas Semiconductor |
| 1333 |
DS1870E-010 |
5 V, LDMOS RF power-amplifier bias controller |
MAXIM - Dallas Semiconductor |
| 1334 |
DS1870E-010+ |
LDMOS RF Power-Amplifier Bias Controller |
MAXIM - Dallas Semiconductor |
| 1335 |
DS1870E-010+T&R |
LDMOS RF Power-Amplifier Bias Controller |
MAXIM - Dallas Semiconductor |
| 1336 |
DS4426 |
Quad-Channel, I²C-Margining IDACs with Three Channels of Power-Supply Tracking |
MAXIM - Dallas Semiconductor |
| 1337 |
DS4426T+ |
Quad-Channel, I²C-Margining IDACs with Three Channels of Power-Supply Tracking |
MAXIM - Dallas Semiconductor |
| 1338 |
DS4426T+T&R |
Quad-Channel, I²C-Margining IDACs with Three Channels of Power-Supply Tracking |
MAXIM - Dallas Semiconductor |
| 1339 |
DV2805 |
VHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 1340 |
E435E |
Short-circuit proof power driver for industrial controls, possibly equivalent FZL135S |
RFT |
| 1341 |
EB107 |
Application Note - Mounting considerations for Motorola RF power modules |
Motorola |
| 1342 |
EB8 |
Application Note - How to apply the MHW709/MHW710 UHF power modules |
Motorola |
| 1343 |
ESMD-169 |
1-3500 MHz, surface mount mixer, RF power 50mW |
MA-Com |
| 1344 |
ESMD-169TR |
1-3500 MHz, surface mount mixer, RF power 50mW |
MA-Com |
| 1345 |
EXB356 |
HYBRID ICS FOR BASE DRIVING OF POWER TRANSISTOR MODULE |
Fuji Electric |
| 1346 |
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1347 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1348 |
F1002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1349 |
F1003 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 1350 |
F1004 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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