No. |
Part Name |
Description |
Manufacturer |
1321 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
1322 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
1323 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
1324 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
1325 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
1326 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
1327 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
1328 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
1329 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
1330 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
1331 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
1332 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
1333 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
1334 |
BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL |
Infineon |
1335 |
BSO615C |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.11/0.30Ohm, Id(N) = 3.2A, Id(P) = -2.0A, LL |
Infineon |
1336 |
BSS8402DW-13-F |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
1337 |
BSS8402DW-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
1338 |
BSS8402DW-7-F |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
1339 |
BSS8402DWK |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
1340 |
BSS8402DWQ-13 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
1341 |
BSS8402DWQ-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
1342 |
C1658 |
Approved for use with Conexant ADSL Chip Set Meets requirements of IEC950 for supplementary insulation, 250V working voltage |
CoEv Inc |
1343 |
C1676 |
Approved for use with GlobeSpan HDSL2 Chip Set Meets the requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
1344 |
C1733 |
ADSL Line Coupling Transformer, IEC60950 Supplementary 250V |
CoEv Inc |
1345 |
C2042 |
Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
1346 |
C2852 |
ADSL Coupling Transformer, IEC950 Supplementary 250V 850UH, 1:1 (Line : IC), GW CEP 7 |
Tyco Electronics |
1347 |
CBCP68 |
SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
Central Semiconductor |
1348 |
CBCP69 |
SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
Central Semiconductor |
1349 |
CBCX68 |
SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
Central Semiconductor |
1350 |
CBCX69 |
SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
Central Semiconductor |
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