| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1322 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1323 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1324 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1325 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1326 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1327 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1328 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1329 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1330 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1331 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 1332 |
2N1893 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1333 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
| 1334 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1335 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1336 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1337 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1338 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1339 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1340 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1341 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1342 |
2N1924 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1343 |
2N1925 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1344 |
2N1926 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1345 |
2N1936 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1346 |
2N1937 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 1347 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 1348 |
2N2023 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1349 |
2N2024 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1350 |
2N2025 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
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