| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
NTD20N06LT4 |
Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK |
ON Semiconductor |
| 1322 |
NTD20N06T4 |
Power MOSFET 20 Amps, 60 Volts |
ON Semiconductor |
| 1323 |
NTD20N06T4G |
Power MOSFET 20 Amps, 60 Volts |
ON Semiconductor |
| 1324 |
NTE1396 |
Integrated Circuit 20W Bridge Booster for Car Radio |
NTE Electronics |
| 1325 |
NTE5913 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 20A. |
NTE Electronics |
| 1326 |
NTE5914 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A. |
NTE Electronics |
| 1327 |
NTE5915 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A. |
NTE Electronics |
| 1328 |
NTE5916 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 20A. |
NTE Electronics |
| 1329 |
NTE5917 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 20A. |
NTE Electronics |
| 1330 |
NTE5918 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 20A. |
NTE Electronics |
| 1331 |
NTE5919 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 20A. |
NTE Electronics |
| 1332 |
NTE5920 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 20A. |
NTE Electronics |
| 1333 |
NTE5921 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 20A. |
NTE Electronics |
| 1334 |
NTE5922 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 20A. |
NTE Electronics |
| 1335 |
NTE5923 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 20A. |
NTE Electronics |
| 1336 |
NTE5924 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 20A. |
NTE Electronics |
| 1337 |
NTE5925 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 20A. |
NTE Electronics |
| 1338 |
NTE5928 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 20A. |
NTE Electronics |
| 1339 |
NTE5929 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 20A. |
NTE Electronics |
| 1340 |
NTE5932 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 20A. |
NTE Electronics |
| 1341 |
NTGS3130N |
Power MOSFET 20 V, 5.6 A, Single N-Channel, TSOP-6 |
ON Semiconductor |
| 1342 |
NTHC5513 |
Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ |
ON Semiconductor |
| 1343 |
NTHC5513T1 |
Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ |
ON Semiconductor |
| 1344 |
NTHC5513T1G |
Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ |
ON Semiconductor |
| 1345 |
NTHD4102P |
Power MOSFET 20 V, Dual P-Channel ChipFet™ |
ON Semiconductor |
| 1346 |
NTHD4102PT1 |
Power MOSFET 20 V, Dual P-Channel ChipFet™ |
ON Semiconductor |
| 1347 |
NTHD4102PT1G |
Power MOSFET 20 V, Dual P-Channel ChipFet™ |
ON Semiconductor |
| 1348 |
NTHD4401P |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
| 1349 |
NTHD4401PT1 |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
| 1350 |
NTHD4401PT1G |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
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