| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
279004 |
MICRO fuse, very fast-acting type. Radial lead. Ampere rating 4. Nominal resistance cold 0.0202 Ohms. Voltage rating 125. |
Littelfuse |
| 1322 |
279004 |
MICRO fuse, very fast-acting type. Radial lead. Ampere rating 4. Nominal resistance cold 0.0202 Ohms. Voltage rating 125. |
Littelfuse |
| 1323 |
279005 |
MICRO fuse, very fast-acting type. Radial lead. Ampere rating 5. Nominal resistance cold 0.0156 Ohms. Voltage rating 125. |
Littelfuse |
| 1324 |
279005 |
MICRO fuse, very fast-acting type. Radial lead. Ampere rating 5. Nominal resistance cold 0.0156 Ohms. Voltage rating 125. |
Littelfuse |
| 1325 |
279005 |
MICRO fuse, very fast-acting type. Radial lead. Ampere rating 5. Nominal resistance cold 0.0156 Ohms. Voltage rating 125. |
Littelfuse |
| 1326 |
2800MC |
Mating Connector |
Burr Brown |
| 1327 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1328 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1329 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1330 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1331 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1332 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1333 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1334 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1335 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1336 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1337 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1338 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1339 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1340 |
2N3375 |
Transmitting transistor NPN |
mble |
| 1341 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1342 |
2N3553 |
Transmitting transistor NPN |
mble |
| 1343 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
| 1344 |
2N3632 |
Transmitting transistor NPN |
mble |
| 1345 |
2N3866 |
Transmitting transistor NPN |
mble |
| 1346 |
2N3924 |
Transmitting transistor NPN |
mble |
| 1347 |
2N3926 |
Transmitting transistor NPN |
mble |
| 1348 |
2N3927 |
Transmitting transistor NPN |
mble |
| 1349 |
2N4427 |
Transmitting transistor NPN |
mble |
| 1350 |
2N5071 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| | | |
