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Datasheets for PN

Datasheets found :: 38818
Page: | 439 | 440 | 441 | 442 | 443 | 444 | 445 | 446 | 447 |
No. Part Name Description Manufacturer
13261 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
13262 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
13263 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
13264 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
13265 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
13266 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
13267 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
13268 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
13269 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
13270 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
13271 82325-40 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
13272 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
13273 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
13274 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
13275 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
13276 82729-30 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
13277 82729-60 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
13278 82731-1 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
13279 82731-75 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
13280 82931-55 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
13281 82931-55N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
13282 82931-55S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
13283 83000 3.0GHz 0.5W 28V microwave power NPN transistor for class C applications SGS Thomson Microelectronics
13284 83001 3.0GHz 1.0W 28V microwave power NPN transistor for class C applications SGS Thomson Microelectronics
13285 83135-3 Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
13286 9013 NPN SILICON TRANSISTOR Wing Shing Computer Components
13287 9014 NPN SILICON TRANSISTOR Wing Shing Computer Components
13288 9018 NPN EPITAXIAL PLANAR TRANSISTOR Unisonic Technologies
13289 92PE37A NPN Power Transistor National Semiconductor
13290 92PE37A Medium Power NPN Transistor National Semiconductor


Datasheets found :: 38818
Page: | 439 | 440 | 441 | 442 | 443 | 444 | 445 | 446 | 447 |



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