| No. |
Part Name |
Description |
Manufacturer |
| 13291 |
1N6386 |
Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13292 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13293 |
1N6387 |
Diode TVS Single Bi-Dir 22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13294 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13295 |
1N6388 |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13296 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13297 |
1N6389 |
Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13298 |
1N6391 |
Diode Schottky 45V 25A 2-Pin DO-4 |
New Jersey Semiconductor |
| 13299 |
1N6392 |
Diode Schottky 45V 60A 2-Pin DO-5 |
New Jersey Semiconductor |
| 13300 |
1N63A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 13301 |
1N63A |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
| 13302 |
1N64 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 13303 |
1N643 |
Silicon Planar Diode |
ITT Semiconductors |
| 13304 |
1N643A |
Silicon Planar Diode |
ITT Semiconductors |
| 13305 |
1N645 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 13306 |
1N645 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 13307 |
1N645 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 13308 |
1N645 |
Silicon rectifier diode - normal series |
SESCOSEM |
| 13309 |
1N645A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 13310 |
1N646 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 13311 |
1N646 |
Diode 300V 0.4A 2-Pin DO-35 |
New Jersey Semiconductor |
| 13312 |
1N646 |
Silicon rectifier diode - normal series |
SESCOSEM |
| 13313 |
1N6469US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 13314 |
1N646A |
Diode 300V 0.4A 2-Pin DO-35 |
New Jersey Semiconductor |
| 13315 |
1N647 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 13316 |
1N647 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 13317 |
1N647 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 13318 |
1N647 |
Silicon rectifier diode - normal series |
SESCOSEM |
| 13319 |
1N6470US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
| 13320 |
1N6471US |
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
Microsemi |
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