| No. |
Part Name |
Description |
Manufacturer |
| 13321 |
1N6382-D |
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
ON Semiconductor |
| 13322 |
1N6383 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 13323 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13324 |
1N6383 |
Diode TVS Single Bi-Dir 10V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13325 |
1N6384 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 13326 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13327 |
1N6384 |
Diode TVS Single Bi-Dir 12V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13328 |
1N6385 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 13329 |
1N6385 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13330 |
1N6385 |
Diode TVS Single Bi-Dir 15V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13331 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13332 |
1N6386 |
Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13333 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13334 |
1N6387 |
Diode TVS Single Bi-Dir 22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13335 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13336 |
1N6388 |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13337 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13338 |
1N6389 |
Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 13339 |
1N6391 |
Diode Schottky 45V 25A 2-Pin DO-4 |
New Jersey Semiconductor |
| 13340 |
1N6392 |
Diode Schottky 45V 60A 2-Pin DO-5 |
New Jersey Semiconductor |
| 13341 |
1N63A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 13342 |
1N63A |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
| 13343 |
1N64 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 13344 |
1N643 |
Silicon Planar Diode |
ITT Semiconductors |
| 13345 |
1N643A |
Silicon Planar Diode |
ITT Semiconductors |
| 13346 |
1N645 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 13347 |
1N645 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 13348 |
1N645 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 13349 |
1N645A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 13350 |
1N646 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
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