| No. |
Part Name |
Description |
Manufacturer |
| 13351 |
TC54VN7002ECTTR |
Voltage detector, Nch open drain, 7.0V, +/-2% |
Microchip |
| 13352 |
TC54VN7002EMBTR |
Voltage detector, Nch open drain, 7.0V, +/-2% |
Microchip |
| 13353 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13354 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13355 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13356 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13357 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13358 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13359 |
TC5517CPL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13360 |
TC5517CPL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 13361 |
TC55257BPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 13362 |
TC55257BSPL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 13363 |
TC55257BSPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 13364 |
TC55257BTRL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 13365 |
TC55257BTRL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 13366 |
TC55328J-17 |
17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13367 |
TC55328J-20 |
20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13368 |
TC55328J-25 |
25ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13369 |
TC55328J-35 |
35ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13370 |
TC55328P-17 |
17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13371 |
TC55328P-20 |
20ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13372 |
TC55328P-25 |
25ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13373 |
TC55328P-35 |
35ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
| 13374 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 13375 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 13376 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 13377 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 13378 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 13379 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 13380 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
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